Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZZnO conducting layer

Journal of Physics D: Applied Physics

Volumn 42, Issue 9, 2009, Pages

  Shandilya, Swati ^a   Tomar, Monika ^b   Sreenivas, K ^a   Gupta, Vinay ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTIVITIES; AL-DOPED ZNO; ANTI-SITE DEFECTS; CONDUCTING LAYERS; DIELECTRIC CONSTANTS; INTERDIFFUSION LAYERS; INTERFACIAL DEFECTS; OPTIMIZED DEPOSITION CONDITIONS; OXYGEN PRESSURES; RAMAN SPECTRUM; ROTATING SUBSTRATES; SILICON SUBSTRATES; SINGLE PHASE; SUBSTRATE TEMPERATURES; X- RAY DIFFRACTIONS; ZNO LAYERS;

ALUMINUM; CERAMIC CAPACITORS; DIELECTRIC PROPERTIES; LIGHT; NIOBIUM; OXYGEN; PHASE INTERFACES; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; ROTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TRANSITION METALS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CONDUCTIVE FILMS;

EID: 65449187600     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/9/095303     Document Type: Article

References (33)

1. Marsh A M, Harkness S D, Qian F and Singh R K 1993 Appl. Phys. Lett. 62 952
2. Fujimura N, Kakinoki M, Tsuboi H and Ito T 1994 J. Appl. Phys. 75 2169
3. Galiinetto P, Granado D, Mozzati M C, Ballarini D and Giulotto E 2007 Phys. Status Solidi c 4 1329
4. Wooten L et al 2000 IEEE J. Sel. Top. Quantum Electron. 6 69
5. Shibata Y, Kaya K, Akashi K, Kanai M, Kawai T and Kawai S 1995 J. Appl. Phys. 77 1498
6. Doonerberg H, Tomlinson S M, Catlow C R A and Schirmer O F 1989 Phys. Rev. B 40 11909
7. Fujii Y, Otsuka Y and Ikeda A 2007 IEEE Trans. Electron. E90-C 1081
8. Gallo K 2008 Phys. Rev. Lett. 100 053901
9. Zhang Y, Li C, Zhu S N, Dong Z G and Yu T 2007 J. Phys. D: Appl. Phys. 40 1442
10. Vethen M and Ghosez P 2002 Physl. Rev. B 65 214302
11. Marshall J M, Walker D, Thomas P A, Dobedoe R S, Ren Z and Yu S 2007 J. Phys. D: Appl. Phys. 40 7480
12. Park Y, Min B, Vahala K J and Atwater H A 2006 Adv. Mater. 18 1533
13. Kawamata A, Hosaka H and Morita T 2007 Sensors Actuators A 135 782
14. Tan S, Gilbert T, Hung C-Y and Schlesinger T E 1996 J. Appl. Phys. 79 3548
15. Akazawa H and Shimada M 2005 Mater. Sci. Eng. B 120 50
16. Bernabe A D, Prieto C and Andres A D 1996 J. Appl. Phys. 79 143
17. Shandilya S, Sreenivas K and Gupta V 2008 Indian J. Eng. Mater Sci. 15 355
18. Takigawa R, Higurashi E, Suga T, Shinada S and Kawanishi T 2007 IEEE Trans. Electron. E90-C 145
19. Tan S, Schlesinger T E and Migliuolo M 1996 Appl. Phys. Lett. 68 2651
20. Hu W S, Liu Z G, Wu Z C, Liu J M, Chen X Y and Feng D 1999 Appl. Surf. Sci. 141 197
21. Shimizu M, Furushima Y, Nishida T and Shiosaki T 1993 Japan. J. Appl. Phys. Part 1 32 4111
22. Gupta V, Bhattacharya P, Katiyar R S, Tomar M and Sreenivas K 2004 J. Mater. Res. 19 2235
23. Kong Y, Xu J, Chen X, Zhang C, Zhang W and Zhang G 2000 J. Appl. Phys. 87 4410
24. Mehta A, Navrotsky A, Kumada N and Kinomura N 1993 J. Solid State Chem. 102 213
25. Yatsenko A V, Ivanova-Maksimova H M and Sergeev N A 1998 Physica B 254 25
26. Abrahams S C and Marsh P 1986 Acta Crystallogr. B 42 61
27. Kumada N, Ozawa N, Muto F and Kinomura N 1985 J. Solid State Chem. 57 267
28. Mansingh A and Dhar A 1985 J. Phys. D: Appl. Phys. 18 2059
29. Gupta V and Mansingh A 1994 Phys. Rev. B 49 1989
30. Srivastava A, Gupta V, Sarkar C K, Das R R, Bhatacharya P and Katiyar R S 2006 J. Appl. Phys. 100 34102
31. Singh A, Sreenivas K, Katiyar R S and Gupta V 2007 J. Appl. Phys. 102 074110
32. Mansingh A, Srivastava K and Singh B 1979 J. Phys. Chem. Solids 40 603
33. Nassau K, Levinstein H J and Loiacono G M 1966 J. Phys. Chem. Solids 27 989