Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air

IEICE Transactions on Electronics

Volumn E90-C, Issue 1, 2007, Pages 145-146

  Takigawa, Ryo ^a   Higurashi, Eiji ^a   Suga, Tadatomo ^a   Shinada, Satoshi ^b   Kawanishi, Tetsuya ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b National Institute of Information and Communications Technology   (Japan)

Author keywords

Au to Au bonding; Hybrid integration; Lithium niobate silicon structure; Low temperature bonding; Surface activated bonding

Indexed keywords

ARGON; CRACK INITIATION; GOLD; PLASMA APPLICATIONS; SILICON; SURFACE CLEANING; THIN FILMS;

AU TO AU BONDING; HYBRID INTEGRATION; LOW TEMPERATURE BONDING; SURFACE ACTIVATED BONDING;

LITHIUM NIOBATE;

EID: 33846460865     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e90-c.1.145     Document Type: Conference Paper

References (3)

1. A. Namba, M. Sugimoto, T. Ogura, Y. Tomita, and K. Eda, "Direct bonding of piezoelectric crystal onto silicon," Appl. Phys. Lett., vol.67, no.22, pp.3275-3276, 1995.
2. H. Takagi, R. Maeda, N. Hosoda, and T. Suga, "Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation," Appl. Phys. Lett., vol.74, no.16, pp.2387-2389, 1999.
3. T. Suga, T. Itoh, Z. Xu, M. Tomita, and A. Yamauchi, "Surface activated bonding for new flip chip and bumpless interconnect systems," Proc. Electronic Components and Technology Conference (52nd ECTC), pp.105-111, 2002.