|
|
Volumn 355, Issue 14-15, 2009, Pages 851-859
|
|
Electrical transport mechanism in boron nitride thin film
|
|
Author keywords
Alloys; Band structure; Conductivity; Defects; FTIR measurements; Heterojunctions; III V semiconductors
|
|
Indexed keywords
AMORPHOUS LAYERS;
BN FILMS;
BORON NITRIDE THIN FILMS;
CHEMICAL VAPOR DEPOSITED;
CONDUCTIVITY;
DC CURRENTS;
DC VOLTAGE MEASUREMENTS;
DEEP TRAPS;
ELECTRICAL TRANSPORT MECHANISMS;
ELECTRICAL TRANSPORTS;
FTIR MEASUREMENTS;
GATE VOLTAGES;
HOPPING MECHANISMS;
III-V SEMICONDUCTORS;
TEST DEVICES;
TRANSPORT CHARACTERISTICS;
TRANSPORT MECHANISMS;
TURBOSTRATIC;
ALUMINUM;
BAND STRUCTURE;
BORON;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
LITHIUM COMPOUNDS;
MIM DEVICES;
MIS DEVICES;
NITRIDES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR MATERIALS;
SWITCHING CIRCUITS;
THIN FILM DEVICES;
THIN FILMS;
VOLTAGE MEASUREMENT;
BORON NITRIDE;
|
|
EID: 65449152150
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2009.04.034 Document Type: Article |
|
Times cited : (5)
|
|
References (27)
|
