SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 8, 2009, Pages

Amorphous to fcc-polycrystal transition in Ge2 Sb2 Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations

(6) La Fata, Pietro a Torrisi, Felice a Lombardo, Salvatore a Nicotra, Giuseppe a Puglisi, Rosaria a Rimini, Emanuele a

a CNR IMM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; ANNEAL TIME; AVRAMI EXPONENTS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; DATA ANALYSIS; ELECTRICAL MEASUREMENTS; ISOTHERMAL CRYSTALLIZATIONS; JOHNSON-MEHL-AVRAMI-KOLMOGOROV THEORIES; NUCLEATION AND GROWTHS; POLYCRYSTALLINE PHASE; TRANSITION PROCESS; TWO STAGES;

ACTIVATION ENERGY; AMORPHOUS MATERIALS; COMPUTATIONAL COMPLEXITY; CRYSTALLIZATION; ELECTRIC NETWORK ANALYSIS; ELECTRIC VARIABLES MEASUREMENT; GERMANIUM; IMAGE PROCESSING; ION BOMBARDMENT; ION IMPLANTATION; POLYCRYSTALS; TELLURIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE TRANSITIONS;

EID: 65449150857 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3093915 Document Type: Article

Times cited : (15)

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