A study on dry etching for profile and selectivity of ZrO2 thin films over Si by using high density plasma

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4246-4250

  Woo, Jong Chang ^a,b   Kim, Sang Gi ^a   Koo, Jin Gun ^a   Kim, Gwan Ha ^b   Kim, Dong Pyo ^b   Yu, Chong Hee ^a   Kang, Jin Yeong ^a   Kim, Chang IL ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

Etching; HDP; SF6; XPS; ZrO2

Indexed keywords

BIAS POWER; CHAMBER PRESSURES; ETCH MECHANISMS; ETCH RATES; ETCHED SURFACES; ETCHING CHARACTERISTICS; ETCHING PARAMETERS; GAS MIXING RATIOS; HDP; HIGH DENSITY PLASMAS; OXIDE BONDS; SF6; VOLATILE REACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS; ZRO2;

CHEMICAL REACTIONS; ION BOMBARDMENT; IONS; PERMITTIVITY; PLASMA ETCHING; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM ALLOYS;

DRY ETCHING;

EID: 65449137842     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.012     Document Type: Article

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