Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film

Journal of Physics Condensed Matter

Volumn 21, Issue 9, 2009, Pages

  Singh, Sarab Preet ^a   Srivastava, P ^a   Ghosh, S ^a   Khan, Saif Ali ^b   Vijaya Prakash, G ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; HOST MATRICES; HYDROGENATED AMORPHOUS SILICONS; HYDROGENATED SILICONS; OUT DIFFUSIONS; PHASE EVOLUTIONS; PHASE STABILIZATIONS; PHOTO-CVD; POST TREATMENTS; SI ATOMS; SI CONTENTS; SILICON PHOTONICS; STRUCTURAL EVOLUTIONS;

CHEMICAL VAPOR DEPOSITION; HYDROGEN; HYDROGENATION; MERCURY (METAL); POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; STABILIZATION; STOICHIOMETRY;

AMORPHOUS SILICON;

EID: 65449136709     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/9/095010     Document Type: Article

References (30)

1. Pavesi L, Dal Negro L, Mazzoleni C, Franzò G and Priolo F 2000 Nature 408 440-4
2. Cullis A G and Canham L T 1991 Nature 353 335-8
3. Walters R J, Kalkman J, Polman A, Atwater H A and de Dood M J A 2006 Phys. Rev. B 73 132302
4. Iacona F, Fanzò G and Spinella C 2000 J. Appl. Phys. 87 1295
5. Vinciguerra V, Franzò G, Priolo F, Iacona F and Spinella C 2000 J. Appl. Phys. 87 8165-73
6. Chen L Y, Chen W H and Hong F C 2005 Appl. Phys. Lett. 86 193506
7. Torchynskaa T, Becerril Espinoza F G, Goldstein Y, Savir E, Jedrzejewski J, Khomenkova L, Korsunska N and Yukhimchukc V 2003 Physica B 340 1119-23
8. Daldosso N, Das G, Larcheri S, Mariotto G, Dalba G, Pavesi L, Irrera A, Priolo F, Iacona F and Rocca F 2007 J. Appl. Phys. 101 113510
9. Min K S, Shcheglov K V, Yang C M, Atwater Harry A, Brongersma M L and Polman A 1996 Appl. Phys. Lett. 69 2033-5
10. Wang Y, Shen D, Liu Y, Zhang J, Zhang Z, Liu Y, Lu Y and Fan X 2005 Physica E 27 284-9
11. Ma K, Feng J Y and Zhang Z J 2006 Nanotechnology 17 4650-3
12. Thakur R P S and Singh R 1994 Appl. Phys. Lett. 64 327-9
13. Augustine B H, Hu Y Z, Irene E A and McNeil L E 1995 Appl. Phys. Lett. 67 3694-6
14. Mei J J, Chen H, Shen W Z and Dekkers H F W 2006 J. Appl. Phys. 100 073516
15. Maedaa M and Itsumi M 1998 J. Appl. Phys. 84 5243-7
16. Beshkov G, Dimitrov D B, Velchev N, Petrov P, Ivanov B, Zambov L and Dimitrova T 2000 Vacuum 58 509-15
17. Singh S P, Srivastava P, Prakash G V, Modi M H, Rai S and Lodha G S 2008 J. Phys.: Condens. Matter 20 335232
18. Rathi K, Gupta M, Thangaraj R, Chari K S and Agnihotri O P 1995 Thin Solid Films 266 219-23
19. Ghosh S, Ingale A, Som T, Kabiraj D, Tripathi A, Mishra S, Zhang S, Hong X and Avasthi D K 2001 Solid State Commun. 120 445-50
20. Sahu B S, Srivastava P, Agnihotri O P, Lee H C, Sekhar B R, Mahapatra S and Tiwari M K 2004 Thin Solid Films 446 23-8
21. Mittal V K, Lotha S and Avasthi D K 1999 Radiat. Eff. Defects Solids 147 199
22. Akazawa H 2002 Appl. Phys. Lett. 80 3102-4
23. Modi M H, Lodha G S, Srivastava P, Sinha A K and Nandedkar R V 2006 Phys. Rev. B 74 045326
24. Cai L, Rohatgi A, Yang D and El-Sayed M A 1996 J. Appl. Phys. 80 5384-8
25. Li B, Fujimoto T, Fukumoto N, Honda K and Kojima I 1998 Thin Solid Films 334 140-4
26. Tsu D V, Lucovsky G, Mantini J and Chao S S 1987 J. Vac. Sci. Technol. A 5 1998-2002
27. Taylor T N, Butt D P and Pantano C G 1998 Surf. Interface Anal. 26 134-43
28. Vila M, Román E and Prieto C 2005 J. Appl. Phys. 97 113710
29. Rathi V K 1994 Photodeposition of silicon nitride and study of its interface properties Thesis
30. Molinari M, Rinnert H and Vergnat M 2007 J. Appl. Phys. 101 123532