Effect of vacuum rapid thermal annealing on the properties of SiNx films

Vacuum

Volumn 58, Issue 2, 2000, Pages 509-515

  Beshkov, G ^a   Dimitrov, D B ^a   Velchev, N ^b   Petrov, P ^c   Ivanov, B ^d   Zambov, L ^d   Dimitrova, T ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF PLOVDIV   (Bulgaria)

^c INSTITUTE OF ELECTRONICS   (Bulgaria)

^d UNIVERSITY OF CHEMICAL TECHNOLOGY AND METALLURGY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; VACUUM APPLICATIONS; VOLTAGE MEASUREMENT;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON NITRIDE;

EID: 0034251452     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00213-X     Document Type: Article

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