Exciton and biexciton emission from a single InAs/InP quantum dash

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Sk G ^a   Podemski, P ^a   Musial A ^a   Misiewicz, J ^a   Hein, S ^b   Hofling S ^b   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIEXCITON BINDING ENERGIES; BIEXCITON EMISSIONS; EXCITATION POWER DENSITIES; INAS/INP; MICRO-PHOTOLUMINESCENCE SPECTROSCOPIES; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DASHES; RATE-EQUATION MODELS; SINGLE QUANTUM;

BINDING ENERGY; CRYSTAL GROWTH; EXCITONS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

EMISSION SPECTROSCOPY;

EID: 65449118112     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116551     Document Type: Article

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