Photoreflectance-probed excited states in InAs/InGaAlAs quantum dashes grown on Inp substrate

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Rudno Rudzinski W ^a   Kudrawiec, R ^a   Podemski, P ^a   Sek G ^a   Misiewicz, J ^a   Somers, A ^b   Schwertberger, R ^b   Reithmaier, J P ^b,c   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; GROUND STATE; QUANTUM THEORY; SUBSTRATES;

AVERAGE SIZE; GROUND STATE TRANSITION ENERGY; OPTICAL TRANSITIONS; PHOTOREFLECTANCE;

MOLECULAR BEAM EPITAXY;

EID: 33746298353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2226503     Document Type: Article

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