Refractive index dynamics and linewidth enhancement factor in p-Doped InAs-GaAs quantum-dot amplifiers

IEEE Journal of Quantum Electronics

Volumn 45, Issue 6, 2009, Pages 579-585

  Cesari, Valentina ^a   Borri, Paola ^b   Rossetti, Marco ^c,d   Fiore, Andrea ^c,e   Langbein, Wolfgang ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

^c EPFL   (Switzerland)

^d EXALOS AG   (Switzerland)

^e EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Quantum dots (QDs); Semiconductor devices; Ultrafast spectroscopy

Indexed keywords

DIFFERENTIAL GAIN; DOPED DEVICES; ELECTRICALLY PUMPED; ELECTRON RESERVOIR; EXCITONIC TRANSITION; GAAS; GAIN DYNAMICS; GAIN RECOVERY DYNAMICS; HETERODYNE DETECTION; HIGH ENERGY STATE; HOLE DENSITIES; HOLE POPULATIONS; HOLE STATE; INAS; INAS/GAAS; LINEWIDTH ENHANCEMENT FACTOR; MODAL GAIN; P-DOPING; PUMP-PROBE DIFFERENTIAL TRANSMISSION; QUANTUM DOTS; QUANTUM DOTS (QDS); REFRACTIVE INDEX CHANGES; ROOM TEMPERATURE; ULTRAFAST SPECTROSCOPY;

DOPING (ADDITIVES); DYNAMICS; HETERODYNING; INDIUM ARSENIDE; LIGHT REFRACTION; ORGANIC POLYMERS; PHOSPHORUS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SWITCHES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65349160221     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013110     Document Type: Article

References (28)

1. T. Akiyama, N. Hatori, Y. Nakata, H. Ebe, and M. Sugawara, "Pattern-effect-free semiconductor optical amplifiers achieved using quantum dots," Electron. Lett., vol. 38, pp. 1139-1140, 2002.
2. M. Sugawara, H. Ebe, N. Hatori, M. Ishida, Y. Arakawa, T. Akiyama, K. Otsubo, and Y. Nakata, "Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers," Phys. Rev. B, vol. 69, p. 235332, 2004.
3. J. Leuthold, C. H. Joyner, B. Mikkelsen, G. Raybo, J. L. Pleumeekers, B. I. Miller, K. Dreyer, and C. A. Burrus, "100 gbit/s all-optical wavelength conversion with integrated SOA delayed-interference configuration," Electron. Lett., vol. 36, pp. 1129-1130, 2000.
4. A. V. Uskov, E. P. O'Reilly, R. J. Manning, R. P. Webb, D. Cotter, M. Laemmlin, N. N. Ledentsov, and D. Bimberg, "On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers," IEEE Photon. Technol. Lett., vol. 16, no. 12, pp. 1265-67, Dec. 2004.
5. H. Sun, Q. Wang, H. Dong, and N. K. Dutta, "XOR performance of a quantum dot semiconductor optical amplifier based Mach-Zehnder interferometer," Opt. Exp., vol. 13, pp. 1892-1898, 2005.
6. K. L. Hall, G. Lenz, A. M. Darwish, and E. P. Ippen, "Subpicosecond gain and index nonlinearities in InGaAsP diode lasers," Opt. Commun. vol. 111, p. 589, 1994.
7. P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, "Spectral hole-burning and carrier-heating dynamics in InGaAs qunatum dot amplifiers," IEEE J. Sel. Top. Quantum Electron., vol. 6, no. 3, pp. 544-551, May-Jun. 2000.
8. P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, "Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature," IEEE J. Sel. Top. Quantum Electron., vol. 8, no. 5, pp. 984-991, Sep.-Oct. 2002.
9. P. Borri, S. Schneider,W. Langbein, and D. Bimberg, "Ultrafast carrier dynamics in InGaAs quantum dot materials and devices," J. Opt. A: Pure Appl. Opt., vol. 8, pp. S33-S46, 2006.
10. 0 = 161 K from 0 to 80 °C," Appl. Phys. Lett., vol. 80, pp. 3277-3279, 2002.
11. O. B. Shchekin and D. G. Deppe, "The role of p-doping and the density of states on the modulation response of quantum dot lasers," Appl. Phys. Lett., vol. 80, pp. 2758-2760, 2002.
12. S. S. Fathpour, Z. Mi, and P. Bhattacharya, "High-speed quantum dot lasers," J. Phys. D: Appl. Phys., vol. 38, pp. 2103-2111, 2005.
13. K. Gündoǧdu, K. C. Hall, T. F. Boggess, D. G. Deppe, and O. B. Shchekin, "Ultrafast electron capture into p-modulation-doped quantum dots," Appl. Phys. Lett., vol. 85, pp. 4570-4572, 2004.
14. K. W. Sun, A. Kechiantz, B. C. Lee, and C. P. Lee, "Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots," Appl. Phys. Lett., vol. 88, p. 163117, 2006.
15. V. Cesari, W. Langbein, P. Borri, M. Rossetti, A. Fiore, S. Mikhrin, I. Krestnikov, and A. Kovsh, "Ultrafast gain dynamics in 1.3 micron InAs/GaAs quantum-dot optical amplifiers: The effect of p doping," Appl. Phys. Lett., vol. 90, p. 201103, 2007.
16. M. Rossetti, L. Li, A. Fiore, L. Occhi, C. Velez, S. Mikhrin, and A. Kovsh, "High-power quantum-dot superluminescent diodes with p-doped active region," IEEE Photon. Technol. Lett., vol. 18, no. 18, pp. 1946-1948, Sep. 2006.
17. P. Borri, W. Langbein, J. Mork, and J. M. Hvam, "Heterodyne pump-probe and four-wave mixing in semiconductor optical amplifiers using balanced lock-in detection," Opt. Commun., vol. 169, p. 317, 1999.
18. V. Cesari, W. Langbein, P. Borri, M. Rossetti, A. Fiore, S. Mikhrin, I. Krestnikov, and A. Kovsh, "Ultrafast carrier dynamics in p-doped InAs/GaAs quantum-dot amplifiers," IET Optoelectron., vol. 1, pp. 298-302, 2007.
19. S. Schneider, P. Borri, W. Langbein, R. L. Sellin, D. Ouyang, and D. Bimberg, "Excited-state gain dynamics in InGaAs quantum dot amplifiers," IEEE Photon. Technol. Lett., vol. 17, no. 10, pp. 2014-1206, Oct. 2005.
20. T. R. Nielsen, P. Gartner, and F. Jahnke, "Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers," Phys. Rev. B, vol. 69, p. 235314, 2004.
21. H. H. Nilsson, J.-Z. Zhang, and I. Galbraith, "Homogeneous broadening in quantum dots due to auger scattering with wetting layer carriers," Phys. Rev. B, vol. 72, p. 205331, 2005.
22. P. Moreno, M. Richard, M. Rossetti, M. Portella-Oberli, L. H. Li, B. Deveaud-Pledran, and A. Fiore, "Intraband carrier photoexcitation in quantum dot lasers," Nano Lett., vol. 8, pp. 881-885, 2008.
23. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron., vol. QE-18, no. 2, pp. 259-264, Feb. 1982.
24. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, "Linewidth enhancement factor in InGaAs quantum-dot amplifiers," IEEE J. Quantum Electron., vol. 40, no. 10, pp. 1423-1429, Oct. 2004.
25. M. Van der Poel, E. Gehrig, O. Hess, D. Birkedal, and J. M. Hvam, "Ultrafast gain dynamics in quantum-dot amplifiers: Theoretical analysis and experimental investigations," IEEE J. Quantum Electron. vol. 41, no. 9, pp. 1115-1123, Sep. 2005.
26. A. Markus, J. X. Chen, O. Gauthier-Lafaye, J.-G. Provost, C. Paranthoen, and A. Fiore, "Impact of intraband relaxation on the performance of a quantum-dot laser," IEEE J. Sel. Top. Quantum Electron., vol. 9, no. 5, pp. 1308-1314, Sep.-Oct. 2003.
27. B. Dagens, A. Markus, J. X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, "Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser," Electron. Lett., vol. 41, p. 323, 2005.
28. J. Kim, H. Su, S. Minin, and S. L. Chuang, "Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 18, no. 9, pp. 1022-1024, May 2006.