High-power quantum-dot superluminescent diodes with p-Doped active region

IEEE Photonics Technology Letters

Volumn 18, Issue 18, 2006, Pages 1946-1948

  Rossetti, Marco ^a   Li, Lianhe ^a   Fiore, Andrea ^a   Occhi, Lorenzo ^b   Élez, Christian ^b   Mikhrin, Sergey ^c   Kovsh, Alexey ^c  

^a EPFL   (Switzerland)

^b EXALOS AG   (Switzerland)

^c NL Nanosemiconductor GmbH   (Germany)

Author keywords

Gain; Optical coherence tomography (OCT); P doping; Quantum dot (QD); Superluminescent diode; Temperature characteristics

Indexed keywords

OPTICAL COHERENCE TOMOGRAPHY; P-DOPING; QUANTUM DOTS; SUPERLUMINESCENT DIODE; TEMPERATURE CHARACTERISTIC;

COHERENT LIGHT; DOPING (ADDITIVES); PHOSPHORUS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; TOMOGRAPHY;

QUANTUM THEORY;

EID: 34147135849     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.882303     Document Type: Article

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