Ultrafast carrier dynamics in p-doped InAs/GaAs quantum-dot amplifiers

IET Optoelectronics

Volumn 1, Issue 6, 2007, Pages 298-302

  Cesari, V ^a   Langbein, W ^a   Borri, P ^b   Rossetti, M ^c   Fiore, A ^c   Mikhrin, S ^d   Krestnikov, I ^d   Kovsh, A ^d  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

^c EPFL   (Switzerland)

^d INNOLUME GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; LIGHT ABSORPTION; LIGHT AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

ELECTRICAL INJECTION; HETERODYNE DETECTION; P-DOPED AMPLIFIERS; PUMP-PROBE EXPERIMENT;

CARRIER CONCENTRATION;

EID: 37249002251     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt:20070040     Document Type: Article

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