Demonstration of a radiation resistant, high efficiency SiC betavoltaic

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Eiting, C J ^a   Krishnamoorthy, V ^a   Rodgers, S ^a   George, T ^a   Robertson, J David ^b   Brockman, John ^b  

^a Qynergy Corporation   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPEN-CIRCUIT VOLTAGE; P-I-N JUNCTION BETAVOLTAIC;

ELECTRIC POTENTIAL; IRRADIATION; NETWORKS (CIRCUITS); RADIATION; RADIOISOTOPES;

SILICON CARBIDE;

EID: 32444434583     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2172411     Document Type: Article

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