Direct deposition of GaN-based photocathodes on microchannel plates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7212, Issue , 2009, Pages

  Dabiran, Amir M ^a   Wowchaka, Andrew M ^a   Chowa, Peter P ^a   Siegmund, Oswald H W ^b   Hull, Jeffrey S ^b   Malloy, James ^b   Tremsin, Anton S ^b  

^a SVT ASSOCIATES   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

GaN; MBE; MCP; Microchannel plate; Photocathode; Photoemission

Indexed keywords

ALN NUCLEATION LAYERS; ALUMINA SUBSTRATES; C-PLANE SAPPHIRES; DETECTION EFFICIENCIES; DIFFERENT SUBSTRATES; DIRECT DEPOSITIONS; ELECTRICAL MEASUREMENTS; GAN; HIGH QUALITIES; IN VACUUMS; LOW GROWTH TEMPERATURES; MBE; MCP; MICROCHANNEL PLATE; NEGATIVE ELECTRON AFFINITY PHOTOCATHODES; P-TYPE GAN; POLY-CRYSTALLINE; REFLECTION MODES; RF-PLASMAS; TEMPORAL RESOLUTIONS; UV DETECTIONS; UV PHOTOCATHODES;

CESIUM; CORUNDUM; CRYSTAL GROWTH; ELECTRON AFFINITY; EPITAXIAL GROWTH; FIELD EMISSION CATHODES; FUSED SILICA; GALLIUM NITRIDE; IMAGE STORAGE TUBES; MICROCHANNELS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTOCATHODES; PHOTOEMISSION; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICA; SUBSTRATES;

GALLIUM ALLOYS;

EID: 65349108177     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809503     Document Type: Conference Paper

References (19)

1. S. Tremsin, O. H. W. Siegmund, "The quantum efficiency and stability of UV and soft x-ray photocathodes", Proc. SPIE vol. 5920, "Ultrafast X-Ray Detectors, High-Speed Imaging, and Applications"; Stuart Kleinfelder, Dennis L. Paisley, Zenghu Chang, Jean-Claude Kieffer, Jerome B. Hastings; Eds, San Diego August 2005, pp. 111-123 (2005).
2. C. Martin, T. Barlow, W. Barnhart et al., "The Galaxy Evolution Explorer", SPIE Proc. 4854, "Future EUV/UV and Visible Space Astrophysics Missions and Instrumentation, J. Chris Blades; Oswald H. W. Siegmund, Editors, pp.336-350 (2003).
3. R.J. Nemanich, P.K. Baumann, M.C. Benjamin, S.L. English, J.D. Hartman, A.T. Sowers, B.L. Ward, "Characterization of electron emitting surfaces of diamond and III-V nitrides", Diamond Films and Technology 8: (4), pp. 211-223 (1998)
4. C.W. Hatfield, G.L. Bilbro, "Simulation of room temperature thermionic emission from AlxGa1-xN negative electron affinity cathodes", J. Vac. Sci. Tech. B 17: (2), pp. 552-556 (1999).
5. F. Machuca, Z. Liu, Y. Sun, et al., "Role of oxygen in semiconductor negative electron affinity photocathodes", J. Vacuum Sci. Tech. B 20, 2721-2725 (2002).
6. T. J. Norton, B. E. Woodgate, J. Stock, G. Hilton, M. P. Ulmer, S. Aslam, R. D. Vispute, "Results from Cs activated GaN photocathode development for MCP detector systems at NASA GSFC", in UV/EUV and Visible Space Instrumentation for Astronomy II; Oswald H. Siegmund; Ed., Proc. SPIE Vol. 5164, p. 155-164(2003).
7. O. H. W. Siegmund, A. S. Tremsin, A. Martin, J. Malloy, "GaN photocathodes for UV detection and imaging", in UV/EUV and Visible Space Instrumentation for Astronomy II, Proc. SPIE, vol. 5164, 134-143 (2003).;
8. M. P. Ulmer, B. W. Wessels, B. Han, J. Gregie, A. S. Tremsin and O. H. W. Siegmund, "Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications", in UV/EUV and Visible Space Instrumentation for Astronomy II, Proc. SPIE, vol. 5164, p. 144-154 (2003).
9. S. Uchiyama, Y. Takagi, M. Niigaki, H. Kan, H. Kondoh, "GaN-based photocathodes with extremely high quantum efficiency", Appl. Phys. Let. 86, 103511 (2005).
10. S. Fuke, M. Sumiya, T. Nihashi, M. Hagino, M. Matsumoto, Y. Kamo, M Sato, K. Ohtsuka, "Development of UV-photocathodes using GaN film on Si substrate ", Proc. of SPIE Vol. 6894, 68941F, (2008)
11. I. Mizuno, T. Nihashi, T. Nagai, M. Niigaki, Y. Shimizu, K. Shimano, K. Katoh, T. Ihara, K. Okano, M. Matsumoto, M. Tachino, "Development of UV image intensifier tube with GaN photocathode", Proc. of SPIE Vol. 6945, 69451N, (2008).
12. O. H. W. Siegmund, A. S. Tremsin, J. V. Vallerga, J. B. McPhate, J. S. Hull, J. Malloy and A. M. Dabiran, "Gallium Nitride Photocathode Development for Imaging Detectors", Proc. SPIE, vol. 7021-50, "Astronomical Telescopes and Instrumentation" (2008).
13. W. E. Spicer, A. Herrera-Gomez, "Modern theory and applications of photocathodes" in Photodetectors and Power Meters, Kenneth J. Kaufmann; Ed., Proc. SPIE Vol. 2022, 18-35 (1993).
14. S.W. King, J.P.Barnak, M.D.Bremser, K.M.Tracy, C.Ronning, R.F.Davis, and R.J. Nemanich, "Cleaning of AlN and GaN surfaces", J. Appl. Phys. 84, pp.5248-5260 (1998).
15. M. Diale, F.D. Auret,N.G. van der Berg, R.Q. Odendaal, W.D. Roos, "Analysis of GaN cleaning procedures", Appl. Surf. Sci. 246, pp. 279-289 (2005).
16. F. Gonzalez-Posada, J.A. Bardwell, S. Moisa, et al., "Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectronspectroscopy", Appl. Surf. Sci. 253 pp.6185-6190 (2007).
17. C.I. Wu and, A. Kahn, "Electronic states and effective negative electron affinity at cesiated p-GaN surfaces", J. Appl. Phys. 86, pp. 3209-3212 (1999).
18. M. Munoz, Y.S. Huang, F.H. Pollak, H. Yang, "Optical constants of cubic GaN/GaAs(001): Experiment and modeling", J. App. Phys 93:(5), pp.2549-2553 (2003).
19. K. Delendik, I Emeliantchk, A. Litomin, et al., "Aluminum oxide microchannel plates", Nucl. Phys. B 125, pp. 394-399 (2003).