Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5164, Issue , 2003, Pages 144-154

  Ulmer, M P ^a   Wessels, B W ^b   Han, B ^b   Gregie, J ^b   Tremsin, A ^c   Siegmund, O H W ^c  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

GaN; Photocathode; UV astronomy; Wide band gap semiconductor

Indexed keywords

ASTRONOMY; CHARGE COUPLED DEVICES; CONDUCTIVE FILMS; DOPING (ADDITIVES); GALLIUM NITRIDE; PHOTOEMISSION; PHOTOMULTIPLIERS; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICES; ULTRAVIOLET DETECTORS;

GAN; UV ASTRONOMY; WIDE-BAND-GAP SEMICONDUCTOR;

PHOTOCATHODES;

EID: 1842531366     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.507993     Document Type: Conference Paper

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