Simulation of room temperature thermionic emission from AlxGa1-xN negative electron affinity cathodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 2, 1999, Pages 552-556

  Hatfield, C W ^a   Bilbro, G L ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644450866     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. W. G. Oldham and A. G. Milnes, Solid-State Electron. 6, 121 (1963).
2. J. E. Sutherland and J. R. Hauser, IEEE Trans. Electron Devices 24, 363 (1977).
3. C. L. Allyn, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 36, 373 (1980).
4. M. C. Benjamin, C. Wang, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 64, 3288 (1994).
5. J. L. Shaw, H. F. Gray, K. L. Jensen, and T. M. Jung, J. Vac. Sci. Technol. B 14, 2072 (1996).
6. R. J. Nemanich, P. K. Baumann, M. C. Benjamin, S. W. King, J. van der Weide, and R. F. Davis, Diamond Relat. Mater. 5, 790 (1996).
7. M. C. Benjamin, M. D. Bremser, T. W. Weeks, Jr., S. W. King, R. F. Davis, and R. J. Nemnaich, Appl. Surf. Sci. 104/105, 455 (1996).
8. R. J. Nemanich, M. C. Benjamin, S. P. Bozeman, M. D. Bremser, S. W. King, B. L. Ward, R. F. Davis, B. Chen, Z. Zhang, and J. Bemholc, Mater. Res. Soc. Symp. Proc. 395, 777 (1996).
9. G. J. Wojak, W. B. Choi, A. F. Myers, J. J. Cuomo, and J. J. Hren, Technical Digest of the Ninth International Vacuum Microelectronics Conference, St. Petersburg, Russia, 1996 (unpublished), p. 217.
10. V. V. Zhirnov, G. J. Wojak, W. B. Choi, J. J. Cuomo, and J. J. Hren, J. Vac. Sci. Technol. A 15, 1733 (1997).
11. E. W. Forsythe, J. A. Sprague, B. A. Khan, S. Metha, D. A. Smith, I. H. Murzin, B. Ahem, D. W. Weyburne, and G. S. Tompa, Material Research Society Symposium Proceedings (III-V Nitrides) (Material Research Society, Boston, MA, 1996), Vol. 449, p. 1233.
12. J. A. Christman, A. T. Sowers, M. D. Bremser, B. L. Ward, R. F. Davis, and R. J. Nemanich, Mater. Res. Soc. Symp. Proc. 449, 1121 (1996).
13. A. T. Sowers, J. A. Christman, M. D. Bremser, B. L. Ward, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 71, 2289 (1997).
14. J. F. Schetzina, Mater. Res. Soc. Symp. Proc. 395, 123 (1996).
15. J. F. Schetzina, U.S. Patent No. 5,679,965 (21 Oct. 1997).
16. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 245.
17. M. N. Yoder, IEEE Trans. Electron Devices 43, 1633 (1996).
18. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 849.
19. J. Singh, Physics of Semiconductors and Their Heterostructures (McGraw-Hill, New York, 1993), p. 825.
20. P. Boguslawski and J. Bernholc, Phys. Rev. B 56, 9496 (1997).
21. M. D. Bremser, W. G. Perry, O. H. Nam, D. P. Griffis, R. Loesing, D. A. Ricks, and R. F. Davis, J. Electron. Mater. 27, 229 (1998).
22. P. V. O'Neil, Advanced Engineering Mathematics (PWS, Boston, MA, 1995), p. 208.
23. Maple V, Waterloo Maple Inc., 450 Philip St., Waterloo, ON Canada N2L 5J2.
24. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 252.
25. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 256.