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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

Development of UV-photocathodes using GaN film on Si substrate

(8) Fuke, S a Sumiya, M b Nihashi, T c Hagino, M c Matsumoto, M c Kamo, Y a Sato, M d Ohtsuka, K d

a SHIZUOKA UNIVERSITY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c CENTRAL RESEARCH LABORATORY (Japan)

d SANKEN ELECTRIC CO LTD (Japan)

Author keywords

GaN; High quantum efficiency; Low cost; Photocathode; Si substrate; UV

Indexed keywords

CATHODES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CUBIC BORON NITRIDE; EPITAXIAL GROWTH; FIELD EMISSION CATHODES; GALLIUM; GALLIUM COMPOUNDS; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PHOTOCATHODES; PHOTOELECTRICITY; PIGMENTS; RADIATION; SEMICONDUCTING GALLIUM; SILICON; ULTRAVIOLET RADIATION;

(CO/PT) MULTILAYERS; CHEMICAL VAPORS; CONCENTRATION (COMPOSITION); CRACK FREE; GAN FILMS; GAN TEMPLATES; METAL ORGANIC (MO); MG-DOPED; NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; SI(2 1 1) SUBSTRATES; ULTRAVIOLET (UV);

GALLIUM ALLOYS;

EID: 42149175465 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.770233 Document Type: Conference Paper

Times cited : (16)

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