Stoichiometry and microstructural effects on electrical conduction in pulsed dc sputtered vanadium oxide thin films

Journal of Materials Research

Volumn 24, Issue 4, 2009, Pages 1590-1599

  Gauntt, Bryan D ^a   Dickey, Elizabeth C ^a   Horn, Mark W ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS GROWTHS; BRIGHT FIELDS; CRYSTALLINE PHASE; CRYSTALLINITY; CUBIC PHASE; ELECTRICAL CONDUCTIONS; ELECTRICAL RESISTIVITIES; ELECTRON ENERGY-LOSS SPECTROSCOPIES; ELECTRON-DIFFRACTION DATUM; EQUILIBRIUM PHASE; FILM RESISTIVITIES; GLANCING INCIDENCE X-RAY DIFFRACTIONS; MICROSTRUCTURAL EFFECTS; NANO-CRYSTALLINE; ORDERS OF MAGNITUDES; OXYGEN CONTENTS; PARTIAL PRESSURE OF OXYGENS; PROBE MEASUREMENTS; PULSED DIRECT CURRENTS; PULSED-DC; TEM; TEM IMAGES; TEMPERATURE COEFFICIENT OF RESISTANCES; TEMPERATURE COEFFICIENT OF RESISTIVITIES; TOTAL PRESSURES; TWO POINTS; VANADIUM OXIDE THIN FILMS; VANADIUM OXIDES;

ARGON; AUGER ELECTRON SPECTROSCOPY; ELECTRIC REACTORS; ELECTRIC RESISTANCE; ELECTRON DIFFRACTION; ENERGY DISSIPATION; OXIDE FILMS; OXIDES; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SODIUM; SODIUM CHLORIDE; SPACE PROBES; STOICHIOMETRY; THERMAL CONDUCTIVITY OF SOLIDS; THIN FILMS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 65349098875     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0183     Document Type: Article

References (35)

1. P.W. Kruse and D.D. Skatrud: Uncooled Infrared Imaging Arrays and Systems (Academic Press, San Diego, CA, 1997), p. 341.
2. S.O. Kasap: Principles of Electronic Materials and Devices, 3rd ed. (McGraw-Hill, Boston, 2006), p. 874.
3. P.W. Kruse: Uncooled Thermal Imaging; Arrays, Systems, and Applications (SPIE Press, Bellingham, WA, 2002), p. 89.
4. Alloy Phase Diagrams, edited by H. Baker (ASM International, Materials Park, OH, 1992), p. 512.
5. 2n-1. Ann. Phys. 13, 475 (2004).
6. H. Wada, M. Nagashima, N. Oda, T. Sasaki, and T. Mori: VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film. U.S. Patent No. 5,801,383. (September 1, 1998).
7. S.B. Wang, S.B. Zhou, G. Huang, and X.J. Yi: VOx thin films obtained by ion beam sputtering and oxidation processes. Surf. Coat. Technol. 191, 330 (2005).
8. E. Chain: The influence of deposition temperature on the structure and optical properties of vanadium oxide films. J. Vac. Sci. Technol. A 4, 432 (1986).
9. E. Chain: Effects of oxygen in ion-beam sputter deposition of vanadium oxide. J. Vac. Sci. Technol. A 5, 1836 (1987).
10. H. Wang, X. Yi, and S. Chen: Low temperature fabrication of vanadium oxide films for uncooled bolometric detectors. Infrared Phys. Technol. 47, 273 (2006).
11. 2 thin film deposition. Thin Solid Films 12, 231 (1972).
12. 2. hys. Lett. 20, 93 (1972).
13. C. Griffiths and H. Eastwood: Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide. J. Appl. Phys. 45, 2201 (1974).
14. X. Wang, H. Li, Y. Fei, Y. Xiong, Y. Nie, and K. Feng: XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering. Appl. Surf. Sci. 177, 8 (2001).
15. S. Hansen and C. Aita: Low temperature reactive sputter deposition of vanadium oxide. J. Vac. Sci. Technol. A 3, 660 (1985).
16. H. Miyazaki, F. Utsuno, Y. Shigesato, and I. Yasui: The structural characteristics of VOx films prepared by He-introduced reactive RF unbalanced magnetron sputtering. Thin Solid Films 281-282, 436 (1996).
17. E. Kusano and J. Theil: Effects of microstructure and nonstoi-chiometry on electrical properties of vanadium dioxide films. J. Vac. Sci. Technol. A 7, 1314 (1989).
18. C. Chung, L. Wu, and S. Lee: Fabrication of thin film vanadium oxide for microbolometer. Int. J. Nonlinear Sci. Numerical Sim. 3, 299 (2002).
19. H. Jerominek, F. Picard, and D. Vincent: Vanadium oxide films for optical switching and detection. Opt. Eng. 32, 2092 (1993).
20. x thin films with controlled stoichiometry. Phys. Rev. B Condens. Matter 69, 075404 (2004).
21. M.D. Banus, T.B. Reed, and A.J. Strauss: Electrical and magnetic properties of TiO and VO. Phys. Rev. B Condens. Matter 5, 2775 (1972).
22. J. Sellers: Asymmetric bipolar pulsed DC: The enabling technology for reactive PVD. Surf. Coat. Technol. 98, 1245 (1998).
23. L.R. Doolittle: Algorithms for the rapid simulation of Rutherford backscattering spectra. Nucl. Inst. Meth., Phys. Res. B 9, 344 (1985).
24. J. Stringer: The vanadium-oxygen system-A review. J. Less Common Met. 8, 1 (1965).
25. x. Phys. Rev. B Condens. Matter 5, 2764 (1972).
26. C. Hebert, M. Willinger, D. Su, P. Pongratz, P. Schattschneider, and R. Schlogl: Oxygen K-edge in vanadium oxides: Simulations and experiments. Eur. Phys. J. B 28, 407 (2002).
27. M. Willinger: Investigation of the Oxygen K-Edge Fine Structure in Vanadium Oxides (Institut fur Angewandte une Technische Physik der Technischen Universitat Wien, Berlin, 2001), p. 65.
28. Y. Igasaki and H. Mitsuhashi: Origin of negative temperature coefficient of resistivity in polycrystalline Ti-N films. J. Appl. Phys. 54, 836 (1983).
29. L. Murawski, C. Chung, and J. Mackenzie: Electrical properties of semiconducting oxide glasses. J. Non-Cryst. Solids 32, 91 (1979).
30. T. Szorenyi, K. Bali, and I. Hevesi: Amorphous vanadium oxide by CVD: Preparation, electrical and magnetic properties. J. Phys. Coll. 42, 997 (1981).
31. S. Baranovski: Charge Transport in Disordered Solids, edited by P. Capper, S. Kasap, and A. Willoughby (John Wiley & Sons, Chichester, 2006), p. 479.
32. N.F. Mott: Conduction in glasses containing transition metal ions. J. Non-Cryst. Solids 1 , 1 (1968).
33. W. Meyer and H. Neldel: A relation between the energy constant 6 and the quantity constant a in the conductivity-temperature formula for oxide semiconductors. Z. Tech. Phys. 18, 588 (1937).
34. H. Meiling and R. Schropp: The inverse Meyer-Neldel rule in thin-film transistors with intrinsic heterogeneous silicon. Appl. Phys. Lett. 74, 1012 (1999).
35. G. Lucovsky and H. Overhof: An application of the statistical shift model to the inverted Meyer-Neldel, M-N, relationship in heavily-doped microcrystalline Si, uc-Si. J. Non-Cryst. Solids 164-166, 973 (1993).