The structural characteristics of VOx films prepared by He-introduced reactive RF unbalanced magnetron sputtering

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 436-440

  Miyazaki, H ^a   Utsuno, F ^a   Shigesato, Y ^a   Yasui, I ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Phase transitions; Plasma processing and deposition; Sputtering; Vanadium oxide

Indexed keywords

CATHODES; CRYSTAL STRUCTURE; DEPOSITION; FILM PREPARATION; HELIUM; IONIZATION; MAGNETIC FIELDS; MAGNETRON SPUTTERING; OXIDATION; PHASE TRANSITIONS; PLASMA DIAGNOSTICS; VANADIUM COMPOUNDS;

ELECTRON TRAPPING; OPTICAL EMISSION MONITORING; PENNING IONIZATION; PLASMA PROCESSING; REACTIVE GAS; THERMOCHROMIC FILM; VANADIUM OXIDE;

THIN FILMS;

EID: 0030217582     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08669-5     Document Type: Article

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