Residual stress on nanocrystalline silicon thin films deposited under energetic ion bombardment by using internal ICP-CVD

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4100-4103

  Lee, H C ^a   Hong, S P ^a   Kang, S K ^b   Yeom, G Y ^a,b,c  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c National Program for Tera Level Devices   (South Korea)

Author keywords

Bias; ICP CVD; Internal antenna; Nanocrystalline silicon; Residual stress

Indexed keywords

BIAS; BIAS POWER; CAPACITIVELY COUPLED PLASMAS; CRYSTALLINE VOLUME FRACTIONS; DEFECT FORMATIONS; ICP-CVD; INTERNAL ANTENNA; INTERSTITIAL ATOMS; LOW BIAS; NANO-CRYSTALLINE SILICON THIN FILMS; RESIDUAL COMPRESSIVE STRESS; RF BIAS; ROOM TEMPERATURES; SILICON THIN FILMS; STRUCTURAL CHARACTERISTICS;

ANTENNAS; COMPRESSIVE STRESS; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; NANOCRYSTALLINE SILICON; NONMETALS; PLASMA DEPOSITION; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; STRENGTH OF MATERIALS; TENSILE STRESS; THIN FILM DEVICES; THIN FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 65149097395     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.140     Document Type: Article

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