Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 419-423

  Lee, Y J ^a   Kim, K N ^a   Song, B K ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Etching; Inductively coupled plasma; Large area plasma; Straight antenna

Indexed keywords

ANTENNAS; ELECTRIC FIELDS; FLAT PANEL DISPLAYS; LIQUID CRYSTAL DISPLAYS; MAGNETIC FIELDS; PERMANENT MAGNETS; PLASMA ETCHING; PLASMA SOURCES;

HIGH DENSITY PLASMAS;

INDUCTIVELY COUPLED PLASMA;

EID: 0036963299     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00129-4     Document Type: Conference Paper

References (10)

1. Mendoza F, Sarette B, McReynolds D, Richardson B, Holland J. Semiconductor International. June 1999. p. 143.
2. Chang CY, Sze SM. ULSI technology New York: McGraw-Hill, 1996. p. 329.
3. Crowley J.L. Solid State Technol. 35:1992;94.
4. Yu J., Shaw D., Gonzales P., Collins G.J. J Vac Sci Technol A. 13(3):1995;871.
5. Lee P.W., Kim S.S., Seo S.H., Chang C.S., Chang H.Y., Ichiki T., Horiike Y. Jpn J Appl Phys. 39:2000;L548.
6. Khater M.H., Overzet L.J. J Vac Sci Technol A. 19(3):2001;785.
7. Wu Y., Lieberman M.A. Appl Phys Lett. 72:1998;777.
8. Kanoh M., Suzuki K., Tonotani K., Aoki K., Yamage M. Jpn J Appl Phys. 40:2001;5419.
9. Horiike Y., Okano H., Yamazaki T., Horie H. Jpn J Appl Phys. 20:1981;L817.
10. Lin I., Hinson D.C., Class W.H., Sandstrom R.L. Appl Phys Lett. 44:1984;185.