Effect of capacitive to inductive coupling transition in multiple linear U-type antenna on silicon thin film deposition from pure Si H4 discharges

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 842-846

  Kim, Hong Bum ^a   Lee, Hyoung Cheol ^a   Kim, Kyong Nam ^a   Yeom, Geun Young ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANTENNA ACCESSORIES; ANTENNAS; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; DISTRIBUTION FUNCTIONS; ELECTRIC DISCHARGES; ELECTRIC PROPERTIES; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; METALLIC FILMS; MICROCRYSTALLINE SILICON; OPTICAL CONDUCTIVITY; PHOTORESISTS; PLASMAS; SILICON; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; VOLUME FRACTION;

BAND GAPS; CAPACITIVELY COUPLED PLASMA (CCP); COUPLED PLASMAS; CRYSTALLINE VOLUME FRACTION (XC); DARK CONDUCTIVITY; ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRON ENERGY DISTRIBUTION FUNCTION (EEDF); GLASS SUBSTRATES; ICP SOURCE; INDUCTIVE COUPLINGS; INDUCTIVELY COUPLED PLASMA (ICP) SOURCE; LARGE AREAS; OPTICAL (PET) (OPET); PLASMA MODES; RF POWERING; SILICON FILMS; SILICON THIN FILMS;

AMORPHOUS SILICON;

EID: 46449114565     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2924340     Document Type: Article

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