Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 280-283

  Paillard, Vincent ^a   Puech, Pascal ^a   Roca i Cabarrocas, Pere ^b  

^a CNRS   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GLOW DISCHARGES; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; STRESS ANALYSIS; SUBSTRATES; THIN FILMS;

STRESS GRADIENTS;

SEMICONDUCTING SILICON;

EID: 0036539761     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(02)00936-5     Document Type: Article

References (13)