Physical property change of heavily neutron-irradiated Si3N4 and SiC by thermal annealing

Journal of Nuclear Materials

Volumn 289, Issue 1-2, 2001, Pages 102-109

  Yano, Toyohiko ^a   Akiyoshi, Masafumi ^a   Ichikawa, Kohki ^a   Tachi, Yoshiaki ^b   Iseki, Takayoshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN BOUNDARIES; LATTICE CONSTANTS; NEUTRON IRRADIATION; POINT DEFECTS; SILICON CARBIDE; SILICON NITRIDE; SOLID SOLUTIONS; THERMAL DIFFUSION IN SOLIDS; X RAY CRYSTALLOGRAPHY;

INTERSTITIALS;

CERAMIC MATERIALS;

EID: 0034831807     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(00)00688-7     Document Type: Article

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