Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

  Senda, Ryota ^a   Miura, Aya ^a   Hayakawa, Takemasa ^a   Kawashima, Takeshi ^a   Iida, Daisuke ^a   Nagai, Tetsuya ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

Epitaxial lateral growth; LED; M plane; PL; Thick GaInN layer

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

BLUE-LIGHT EMISSION; MULTIQUANTUM WELLS; PEAK WAVELENGTH; PHOTOLUMINESCENCE INTENSITY;

THICK FILMS;

EID: 36048989287     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L948     Document Type: Article

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