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Volumn 102, Issue 13, 2009, Pages

Conservation of the lateral electron momentum at a metal-semiconductor interface studied by ballistic electron emission microscopy

(6) Bobisch, C A a Bannani, A a Koroteev, Yu M b Bihlmayer, G c Chulkov, E V d,e Moller R a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

b INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE (Russian Federation)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d UNIVERSITY OF THE BASQUE COUNTRY UPV EHU (Spain)

e DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON EMISSION MICROSCOPIES; BARRIER HEIGHTS; ELECTRON MOMENTUMS; LATERAL MOMENTUMS; METAL-SEMICONDUCTOR INTERFACES; SCHOTTKY BARRIERS; SI SUBSTRATES; STEP EDGES;

BALLISTICS; ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; ELECTRONS; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64649091419 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.136807 Document Type: Article

Times cited : (16)

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