Characteristics of SiO x thin films deposited by using direct-type pin-to-plate dielectric barrier discharge with DMS/He/O 2 gases at low temperature

Journal of the Korean Physical Society

Volumn 54, Issue 3, 2009, Pages 981-985

  Lee, J H ^a   Kim, Y S ^a   Kyung, S J ^a   Lim, J T ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Atmospheric pressure; PECVD; Silicon oxide

Indexed keywords

EID: 64549158527     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.981     Document Type: Article

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