Characteristic of SiO 2 films deposited by using low-temperature PECVD with TEOS/N 2/O 2

Journal of the Korean Physical Society

Volumn 46, Issue 4, 2005, Pages 890-894

  Lee, June Hee ^a   Jeong, Chang Hyun ^a   Lim, Jong Tae ^a   Jo, Nam Gil ^a   Kyung, Se Jin ^a   Yeom, Geun Young ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

PECVD; SiO 2; TEOS

Indexed keywords

EID: 17744385992     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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