Localized ultra-thin GeOI: An innovative approach to Germanium channel MOSFETs on Bulk Si substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Batai, E ^a,b,c   Monfray, S ^a,b   Tabone, C ^b   Kermarrec, O ^a   Damlencourt, J F ^b   Gautier, P ^b   Rabille, G ^b   Arvet, C ^a   Loubet, N ^a   Campidelli, Y ^a   Hartmann, J M ^b   Pouydebasque, A ^b   Delaye, V ^b   Le Royer, C ^b   Ghibaudo, G ^c   Skotnicki, T ^a   Deleonibus, S ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; GATE LENGTHS; GE CONDENSATIONS; INNOVATIVE APPROACHES; MOSFETS; PMOS DEVICES; SI SUBSTRATES;

CRYSTAL GROWTH; ELECTRON DEVICES; GERMANIUM; MOSFET DEVICES; SILICON; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64549086273     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796704     Document Type: Conference Paper

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