Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Pham, A T ^a   Jungemann, C ^b   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; DETERMINISTIC METHODS; DEVICE SIMULATIONS; DOUBLE GATES; MAGNETO TRANSPORTS; MOBILITY EXTRACTION TECHNIQUES; MOBILITY EXTRACTIONS; P-MOSFETS; PAULI PRINCIPLES; SELF-CONSISTENT SOLUTIONS; SHORT-CHANNEL DEVICES; STATIONARY SOLUTIONS; SUBBAND STRUCTURES;

ELECTRIC RESISTANCE; ELECTRON DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE;

MOSFET DEVICES;

EID: 64549086249     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796844     Document Type: Conference Paper

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