Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently

Journal of Computational Electronics

Volumn 5, Issue 4, 2006, Pages 435-438

  Krishnan, S ^a   Vasileska, D ^b   Fischetti, M V ^c  

^a INTEL CORPORATION   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

Band structure; Quantum confinement; SiGe p channel devices; Strain

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; HOLE MOBILITY; MONTE CARLO METHODS; POISSON EQUATION; QUANTUM CONFINEMENT; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

INTERFACE ROUGHNESS; SIZE QUANTIZATION;

MOSFET DEVICES;

EID: 34248636232     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0046-1     Document Type: Article

References (3)

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2. Demkov, A.A., Sankey, O.F.: Phys. Rev. Lett. 83, 2038 (1999)
3. Krishnan, S.: PhD Thesis, Arizona State University (2005)