Advances in the Spherical Harmonic-Boltzmann-Wigner approach to device simulation

Superlattices and Microstructures

Volumn 27, Issue 2, 2000, Pages 159-175

  Goldsman, Neil ^a   Lin, Chung Kai ^a   Han, Zhiyi ^a   Huang, Chung Kuang ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; FUNCTIONS; HARMONIC ANALYSIS; INTERPOLATION; MOSFET DEVICES; QUANTUM THEORY;

BOLTZMANN EQUATION; SPHERICAL HARMONIC-BOLTZMANN METHOD; WIGNER EQUATION;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033732864     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0810     Document Type: Article

References (15)

1. Goldsman N., Henrickson L., Frey J. A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation. Solid-State Electron. 34:1991;389-396.
2. Hennacy K. A., Goldsman N. A generalized Legendre polynomial/sparse matrix approach for determining the distribution function in non-polar semiconductors. Solid-State Electron. 36:1993;869-877.
3. Hennacy K. A., Wu Y.-J., Goldsman N., Mayergoyz I. D. Deterministic MOSFET simulation using a generalized spherical harmonic expansion of the Boltzmann equation. Solid-State Electron. 38:1995;1498-1495.
4. Liang W., Goldsman N., Mayergoyz I., Oldiges P. 2-dMOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson and hole-continuity equations. IEEE Trans. Electron Devices. 44:1997;257-276.
5. Gnudi A., Ventura D., Baccarani G. Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. CAD. 12:1993;1706.
6. Gnudi A., Ventura D., Baccarani G., Odeh F. Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation. Solid-State Electron. 36:1993;575.
7. Vecchi M. C., Mohring J., Rudan M. An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation. IEEE Trans. CAD ICAS. 16:1997;353.
8. Vecchi M. C., Rudan M. Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE. IEEE Trans. Electron Devices. 45:1998;230.
9. Lin C.-K., Goldsman N., Mayergoyz I. D., Chang C.-H. A transient solution of the Boltzmann equation exposes energy overshoot in semiconductor devices. J. Appl. Phys. 86:1999;468-475.
10. Chang C.-H., Lin C.-K., Goldsman N., Mayergoyz I. D. Spherical harmonic modeling of a 0.05 μm base BJT: a comparison with Monte Carlo and asymptotic analysis. VLSI Design. 8:1998;147-151.
11. Antoniadis D. A. Design of well-tempered nanoscale MOSFETs. Third NASA Workshop on Device Modeling. 1999.
12. Fiegna C., Sangiorgi E. Modeling of high-energy electrons in MOS devices at the microscopic level. IEEE Trans. Electron Devices. 40:1993;619-627.
13. Brunetti R., Jacoboni C. A many-band silicon model for hot-electron transport at high energies. Solid-State Electron. 32:1989;1663-1667.
14. Wu Y.-J., Goldsman N. Deterministic modeling of impact ionization with a random-kapproximation and the solution of the multi-band Boltzmann transport equation. J. Appl. Phys. 78:1995;5174.
15. Kim Y. S., Noz M. E. Phase Space Picture of Quantum Mechanics. 1991;World Scientific, New Jersey.