Characterization of a-C:H thin films deposited from C2H 4 by PECVD microwave discharge

Materials Science Forum

Volumn 609, Issue , 2009, Pages 49-52

  Kihel, M ^a   Clergeraux, R ^b   Sahli, S ^a   Escaich, D ^b   Segui, Y ^b   Raynaud, P ^b  

^a Universite Mentouri Constantine   (Algeria)

^b d'Hydraulique et des Telecommunications   (France)

Author keywords

A C:H thin films; C2H4 precursor; PECVD; Physico chemical properties

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; CYCLOTRONS; DEPOSITION RATES; ELECTRIC DISCHARGES; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

A-C:H THIN FILM; C2H4 PRECURSOR; FILM DENSITY; HYDROGEN CONCENTRATION; HYDROGENATED AMORPHOUS CARBON (A-C:H); MICROWAVE DISCHARGE; PHYSICOCHEMICAL PROPERTY; PLASMA POWER; PLASMA REACTORS; THIN-FILMS;

THIN FILMS;

EID: 64349111271     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.609.49     Document Type: Conference Paper

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