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Volumn 88, Issue 16, 2006, Pages

Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; GALLIUM NITRIDE; NEAR FIELD SCANNING OPTICAL MICROSCOPY; OPTICAL RESOLVING POWER; PHOTOLUMINESCENCE;

EID: 33646203459     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2190270     Document Type: Article
Times cited : (15)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.