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Volumn 2006, Issue , 2006, Pages 1223-1226

Bumpless interconnect of Cu electrodes in millions-pins level

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CHEMICAL MECHANICAL POLISHING; COPPER; INTERCONNECTION NETWORKS; PHOTOLITHOGRAPHY; SHEAR STRENGTH;

EID: 33845593574     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2006.1645808     Document Type: Conference Paper
Times cited : (19)

References (11)
  • 1
    • 33845566266 scopus 로고    scopus 로고
    • Int'l Technology Roadmap for Semiconductors (ITRS), http://public.itrs. net
  • 2
    • 0034478736 scopus 로고    scopus 로고
    • Feasibility of surface activated bonding for ultra-fine pitch interconnection
    • ECTC
    • th IEEE, ECTC, 2000, pp. 702-705.
    • (2000) th IEEE , pp. 702-705
    • Suga, T.1
  • 3
    • 0034835192 scopus 로고    scopus 로고
    • Bump-less interconnect for next generation system packaging
    • ECTC
    • st IEEE, ECTC, 2001. pp. 1003-1008.
    • (2001) st IEEE , pp. 1003-1008
    • Suga, T.1    Otsuka, K.2
  • 4
    • 0000944433 scopus 로고    scopus 로고
    • Surface activated bonding of silicon wafers at room temperature
    • H. Takagi et al, Surface activated bonding of silicon wafers at room temperature, Appl. Phys. Lett., 68 (1996) pp. 2222-2224.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2222-2224
    • Takagi, H.1
  • 5
    • 0031548375 scopus 로고    scopus 로고
    • Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
    • T. R. Chung et al., Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method, J. Applied Surface Science, 117/118 (1997), p. 808.
    • (1997) J. Applied Surface Science , vol.117-118 , pp. 808
    • Chung, T.R.1
  • 6
    • 0038012488 scopus 로고    scopus 로고
    • Room temperature bonding of ultra-fine pitch and law-profiled Cu electrodes for bump-less interconnect
    • ECTC
    • rd IEEE, ECTC, 2003, pp. 848-852.
    • (2003) rd IEEE , pp. 848-852
    • Shigetou, A.1
  • 7
    • 24644443831 scopus 로고    scopus 로고
    • Electrical performance and reliability of fine-pitch Cu bumpless interconnect
    • ECTC
    • th IEEE, ECTC, 2005, pp. 1114-1118.
    • (2005) th IEEE , pp. 1114-1118
    • Shigetou, A.1
  • 8
    • 33845575435 scopus 로고    scopus 로고
    • Combined process of radical and RIE for Si direct bonding
    • H. Itoh et al., Combined Process of Radical and RIE for Si Direct Bonding, Proc. JIEP/CPMTICEP 2005, pp. 94-99.
    • Proc. JIEP/CPMTICEP 2005 , pp. 94-99
    • Itoh, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.