Temperature and Duration Effects on Microstructure Evolution during Copper Wafer Bonding

Journal of Electronic Materials

Volumn 32, Issue 12, 2003, Pages 1371-1374

  Chen, K N ^a   Fan, A ^a   Tan, C S ^a   Reif, R ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Copper (Cu); Microstructure; Wafer bonding

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN GROWTH; HYDROCHLORIC ACID; MICROSTRUCTURE; NITROGEN; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BONDING QUALITY; RESISTANCE-CAPACITANCE (RC); WAFER BONDING;

COPPER;

EID: 0942277788     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0103-5     Document Type: Conference Paper

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