Accelerated life test results of InGaAs/InP heterojunction bipolar transistors

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 74-77

  Lee, Rainier ^a  

^a Vitesse Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SUPPLIES TO APPARATUS; LEAKAGE CURRENTS; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; STRENGTH OF MATERIALS; THERMAL STRESS;

COMMON-EMITTER CURRENT GAIN; CURRENT GAIN DEGRADATION; HIGH VOLTAGE OPERATION; INDIUM PHOSPHIDE INTEGRATED CIRCUIT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0346935286     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252365     Document Type: Conference Paper

References (4)

1. A. Hendarman, E.A. Sovero, X. Xu, K. Witt, "STS-768 Multiplexer with Full Rate Output Data Retimer in InP HBT", 2002 GaAs IC Symposium Proceedings.
2. K.T. Feng, N.X. Nguyen, C. Nguyen, "Reliability of Commercial InP HBTs under High Current Density Lifetest", 2002 GaAs IC Symposium Proceedings.
3. V.E. Houtsma, J. Frackoviak, R.F. Kopf, R.R. Reyes, W. Sung, A. Tate, J. Tong, Y. Yang, N.G. Weimann, Y.K. Chen, "Investigation of stressing InP/InGaAs DHBTs under high current density", 2003 GaAs Mantech Proceedings.
4. B.M. Pain, S. Thomas III, and M.J. Delaney, "Low-Temperature, High-Current Lifetests on InP-Based HBT's", 39th International Reliability Physics Symposium, 2001.