Improvement of open circuit voltage of SnO2-nSi solar cells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. A, 1997, Pages 1083-1090

  Shimizu, Azuma ^a   Shinoda, Shigeru ^a   Sugita, Sanae ^a   Hiroshima, Kohki ^a   Yano, Koji ^a   Kasuga, Masanobu ^a  

^a UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Crystal orientation of Si; Density of surface states; Effective barrier height; n factor; Open circuit photovoltage; Oxidation conditions; SnO2 nSi solar cell

Indexed keywords

OPEN CIRCUIT VOLTAGE;

CRYSTAL ORIENTATION; MIS DEVICES; OXIDATION; SUBSTRATES; THERMAL EFFECTS;

SILICON SOLAR CELLS;

EID: 0031094858     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1083     Document Type: Article

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