0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films derived from RF magnetron sputtering

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1539-1542

  Li, W Z ^a   Xue, J M ^a   Zhou, Z H ^a   Wang, J ^a   Zhu, H ^b   Miao, J M ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Ferroelectric thin films; PMN PT; RF magnetron sputtering

Indexed keywords

ANNEALING; COERCIVE FORCE; DEPOSITION; ELECTRIC FIELD EFFECTS; FERROELECTRIC MATERIALS; HYSTERESIS; LEAD COMPOUNDS; MAGNETRON SPUTTERING; PERMITTIVITY; PEROVSKITE; POLARIZATION; TITANIUM COMPOUNDS;

DIELECTRIC LOSS; MULTILAYER CAPACITORS; PMN-PT; RF MAGNETRON SPUTTERING;

THIN FILMS;

EID: 4344616098     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.093     Document Type: Conference Paper

References (7)

1. Park J.H., Xu F., Susan T.M. Dielectric and piezoelectric properties of sol-gel derived lead magnesium niobium films with different textures. J. Appl. Phys. 89:2001;568-574.
2. 3 thin films using solid source MOCVD techniques. J. Cryst. Growth. 226:2001;247-253.
3. 3 thin films by RF magnetron sputtering. Jpn. J. Appl. Phys., Part 1. 33:1994;6301-6307.
4. 3 (70/30) epitaxial thin films. J. Appl. Phys. 84:1998;5147-5154.
5. 3 thin films by pulsed laser deposition. Appl. Phys. Lett. 66:1995;1611-1613.
6. 3 thin films grown by pulsed laser deposition. J. Appl. Phys. 93:2003;9924-9929.
7. 3 thin films with platinum electrodes. Appl. Phys. Lett. 82:2003;4325-4327.