Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 70-74

  Nieh, R ^a   Onishi, K ^a   Choi, Rino ^a   Cho, Hag Ju ^a   Kang, Chang Seok ^a   Gopalan, S ^a   Krishna, S ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM OXIDES; LEAKAGE CURRENTS; NITROGEN; RECONFIGURABLE HARDWARE;

GATE-LEAKAGE CURRENT; HIGH DIELECTRIC CONSTANTS; HIGH-K MATERIALS; NITROGEN INCORPORATION; PERFORMANCE EFFECT; SCALING TRENDS; STACK STRUCTURE; SURFACE NITRIDATION;

MOSFET DEVICES;

EID: 84954118336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967550     Document Type: Conference Paper

References (7)

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2. 2 gate dielectrics and self-aligned TaN and TaN/poly gate electrodes", Symp VLSI Tech. Dig., 2001, p. 137.
3. G.D. Wilk, R.M. Wallace, J.M. Anthony, "High-k dielectrics: Current status and materials properties considerations", J. of App. Phys., vol. 89, no. 10, pp. 5243-5275, 2001.
4. 2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation", Symp VLSI Tech. Dig., 2001, p. 15.
5. 2 MOSFET's", Symp VLSI Tech. Dig., 2001, p. 131.
6. 2 MOSFET's", IEDM Tech Dig., 2001, to be published.
7. 2/Si MOSFET performance", IEDM Tech Dig., 2001, to be published.