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Volumn , Issue , 2008, Pages

Gallium nitride surface treatment study for FET passivation process flow applications

Author keywords

Etch etch stops; Passivation techniques; Processing; Wide bandgap

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; DIELECTRIC DEPOSITION; ETCH STOP; PASSIVATION PROCESS; PINCH OFF VOLTAGE; SUBTHRESHOLD SWING; SURFACE PASSIVATION; WIDE BAND GAP;

EID: 84887431954     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 2
    • 0033738001 scopus 로고    scopus 로고
    • The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
    • Jun
    • Green, B.M.; Chu, K.K.; Chumbes, E.M.; Smart, J.A.; Shealy, J.R.; Eastman, L.F., "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs," Electron Device Letters, IEEE, Vol. 21, No. 6, pp. 268-270, Jun 2000.
    • (2000) Electron Device Letters, IEEE , vol.21 , Issue.6 , pp. 268-270
    • Green, B.M.1    Chu, K.K.2    Chumbes, E.M.3    Smart, J.A.4    Shealy, J.R.5    Eastman, L.F.6
  • 5
    • 0033889503 scopus 로고    scopus 로고
    • Wet-chemical passivation of si(111)- and si(100) - Substrates
    • 3 April
    • H. Angermann, W. Henrion, A. Roseler and M. Rebien, Wet-chemical passivation of Si(111)- and Si(100) - Substrates, Materials Science and Engineering B Volume 73, Issues 1-3, 3 April 2000, pages 178-183.
    • (2000) Materials Science and Engineering B , vol.73 , Issue.1-3 , pp. 178-183
    • Angermann, H.1    Henrion, W.2    Roseler, A.3    Rebien, M.4
  • 6
    • 0036785746 scopus 로고    scopus 로고
    • Photo-enhanced chemical wet etch of GaN
    • 1 Oct
    • Ko, C.H., et al., "Photo-enhanced chemical wet etch of GaN," Materials Science and Engineering: B. Vol. 96 (1), 1 Oct 2002, pp 43-47.
    • (2002) Materials Science and Engineering: B. , vol.96 , Issue.1 , pp. 43-47
    • Ko, C.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.