-
2
-
-
0033738001
-
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
-
Jun
-
Green, B.M.; Chu, K.K.; Chumbes, E.M.; Smart, J.A.; Shealy, J.R.; Eastman, L.F., "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs," Electron Device Letters, IEEE, Vol. 21, No. 6, pp. 268-270, Jun 2000.
-
(2000)
Electron Device Letters, IEEE
, vol.21
, Issue.6
, pp. 268-270
-
-
Green, B.M.1
Chu, K.K.2
Chumbes, E.M.3
Smart, J.A.4
Shealy, J.R.5
Eastman, L.F.6
-
3
-
-
21544457041
-
Microwave performance of GaN MESFETs
-
21 Jul
-
Binari, S.C.; Rowland, L.B.; Kruppa, W.; Kelner, G.; Doverspike, K.; Gaskill, D.K., "Microwave performance of GaN MESFETs," Electronics Letters, Vol. 30, No. 15, pp. 1248-1249, 21 Jul 1994
-
(1994)
Electronics Letters
, vol.30
, Issue.15
, pp. 1248-1249
-
-
Binari, S.C.1
Rowland, L.B.2
Kruppa, W.3
Kelner, G.4
Doverspike, K.5
Gaskill, D.K.6
-
4
-
-
0043180473
-
Effects of SiN passivation and high-electric field on AlGaN-gan HFET degradation
-
July
-
Hyungtak Kim; Thompson, R.M.; Tilak, V.; Prunty, T.R.; Shealy, J.R.; Eastman, L.F., "Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation," Electron Device Letters, IEEE, Vol. 24, No. 7, pp. 421-423, July 2003
-
(2003)
Electron Device Letters, IEEE
, vol.24
, Issue.7
, pp. 421-423
-
-
Kim, H.1
Thompson, R.M.2
Tilak, V.3
Prunty, T.R.4
Shealy, J.R.5
Eastman, L.F.6
-
5
-
-
0033889503
-
Wet-chemical passivation of si(111)- and si(100) - Substrates
-
3 April
-
H. Angermann, W. Henrion, A. Roseler and M. Rebien, Wet-chemical passivation of Si(111)- and Si(100) - Substrates, Materials Science and Engineering B Volume 73, Issues 1-3, 3 April 2000, pages 178-183.
-
(2000)
Materials Science and Engineering B
, vol.73
, Issue.1-3
, pp. 178-183
-
-
Angermann, H.1
Henrion, W.2
Roseler, A.3
Rebien, M.4
-
6
-
-
0036785746
-
Photo-enhanced chemical wet etch of GaN
-
1 Oct
-
Ko, C.H., et al., "Photo-enhanced chemical wet etch of GaN," Materials Science and Engineering: B. Vol. 96 (1), 1 Oct 2002, pp 43-47.
-
(2002)
Materials Science and Engineering: B.
, vol.96
, Issue.1
, pp. 43-47
-
-
Ko, C.H.1
-
7
-
-
84887473426
-
Comparison of different GaN etching techniques
-
Ma, L., Adeni, K.F., Zeng, C., Jin, Y., Dandu, K., Saripalli, Y., Johnson, M.A.L., Barlage, D.W, "Comparison of Different GaN Etching Techniques," in CS MANTECH Conf. 2006, 2006, pp. 105-108.
-
(2006)
CS MANTECH Conf. 2006
, pp. 105-108
-
-
Ma, L.1
Adeni, K.F.2
Zeng, C.3
Jin, Y.4
Dandu, K.5
Saripalli, Y.6
Johnson, M.A.L.7
Barlage, D.W.8
-
8
-
-
0017972601
-
6
-
6," Journal of Solid State Chemistry, Vol. 25 (1), 1978, pp. 59-64.
-
(1978)
Journal of Solid State Chemistry
, vol.25
, Issue.1
, pp. 59-64
-
-
Romand, M.1
Roubin, M.2
Deloume, J.-P.3
-
9
-
-
0025462571
-
An XPS study of GaN thin films on GaAs
-
Carin, R., Deville, J.P., Werckmann, J., "An XPS study of GaN thin films on GaAs," Surface and Interface Analysis, Vol. 16 (1-12), 2004, pp. 65-69.
-
(2004)
Surface and Interface Analysis
, vol.16
, Issue.1-12
, pp. 65-69
-
-
Carin, R.1
Deville, J.P.2
Werckmann, J.3
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