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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1917-1919

Cryogenic characteristics of sub-100-nm-gate AlGaN/GaN MIS-HEMTs

(5) Endoh, Akira a Watanabe, Issei a Yamashita, Yoshimi b Mimura, Takashi a,b Matsui, Toshiaki a

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

b FUJITSU LABORATORIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; AVERAGE VELOCITY; DC AND RF CHARACTERISTICS; DRAIN-SOURCE CURRENTS; ELECTRON VELOCITY; GATE LENGTH; MAXIMUM TRANSCONDUCTANCE; METAL-INSULATOR-SEMICONDUCTORS; TRANSIT TIME ANALYSIS;

CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; SILICON NITRIDE; SWITCHING CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 63349108209 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778427 Document Type: Conference Paper

Times cited : (6)

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