Characteristics of tantalum carbo-nitride thin films deposited with atomic layer deposition process

ECS Transactions

Volumn 16, Issue 4, 2009, Pages 227-236

  Song, M K ^a   Rhee, S W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMS; CARBIDES; ELECTRONIC PROPERTIES; NITRIDES; OXYGEN; PHASE COMPOSITION; SILICON COMPOUNDS; TANTALUM OXIDES; THIN FILMS;

CARBIDE PHASE; DEPOSITION TEMPERATURES; FILM RESISTIVITY; NITRIDE THIN FILMS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POST-DEPOSITION; PROCESS PARAMETERS; REACTIVE GAS;

ATOMIC LAYER DEPOSITION;

EID: 63149199486     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2979998     Document Type: Conference Paper

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