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Volumn , Issue , 2008, Pages 212-218
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Advanced metallization for 3D integration
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Author keywords
[No Author keywords available]
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Indexed keywords
APPLICATIONS;
APPROXIMATION THEORY;
ASPECT RATIO;
CHEMICAL ENGINEERING;
CHIP SCALE PACKAGES;
COST REDUCTION;
DEPOSITION;
ELECTRIC CONDUCTIVITY;
ELECTRODEPOSITION;
ELECTRONIC EQUIPMENT MANUFACTURE;
ELECTRONICS INDUSTRY;
LITHOGRAPHY;
METALLIZING;
OPTICAL INTERCONNECTS;
PACKAGING;
PHOTORESISTS;
PHYSICAL VAPOR DEPOSITION;
PRESSURE DROP;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR MATERIALS;
SILICON WAFERS;
STRUCTURAL METALS;
TECHNOLOGY;
VAPORS;
3-D INTEGRATIONS;
3-D INTERCONNECTS;
3-D PACKAGING;
3D VERTICAL INTEGRATIONS;
ADVANCED PACKAGING;
CHEMICAL FORMULATIONS;
CHIP STACKING;
CONDUCTIVE LAYERS;
COPPER ELECTRODEPOSITIONS;
COPPER INTERCONNECT;
DEPOSITION CONDITIONS;
DEPOSITION METHODS;
ELECTRODEPOSITION PROCESS;
ELECTRONIC PRODUCTS;
FORM FACTORS;
HIGH ASPECT RATIOS;
LOWER COSTS;
MATERIALS AND PROCESS;
METALLIZATION;
NEW APPROACHES;
NEW TECHNOLOGIES;
PACKAGING TECHNOLOGIES;
PROCESS PARAMETERS;
REDISTRIBUTION LAYERS;
RESEARCH INSTITUTES;
SEED LAYERS;
SEMICONDUCTOR INDUSTRIES;
SEMICONDUCTOR MANUFACTURERS;
THICKNESS DISTRIBUTIONS;
THROUGH MASKS;
THROUGH-SILICON-VIA;
VIA FILLINGS;
VOID-FREE;
WAFER-LEVEL PACKAGING;
WET CHEMICAL PROCESS;
WITHIN DIES;
CHEMICAL VAPOR DEPOSITION;
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EID: 63049135175
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/EPTC.2008.4763436 Document Type: Conference Paper |
Times cited : (46)
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References (12)
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