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Volumn 913, Issue , 2006, Pages 157-162
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Stress and strain measurements in semiconductor device channel areas by convergent beam electron diffraction
a a a a a a a a
a
IBM
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
DISLOCATIONS (CRYSTALS);
ELECTRON DIFFRACTION;
SEMICONDUCTING SILICON COMPOUNDS;
STRAIN MEASUREMENT;
STRESS ANALYSIS;
CHANNEL AREAS;
CONVERGENT ELECTRON BEAM DIFFRACTION (CBED);
DISLOCATION LOOPS;
MOS DEVICES;
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EID: 33846042148
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-0913-d05-03 Document Type: Conference Paper |
Times cited : (11)
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References (11)
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