Strain characterisation at the nm scale of sub-micron devices by convergent-beam electron diffraction

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 727-734

  Armigliato, A ^a   Balboni, R ^a   Benedetti, A ^a   Carnevale, G P ^a   Cullis, A G ^a   Frabboni, S ^a   Piccolo, D ^a  

^a CNR   (Italy)

Author keywords

Electron diffraction; Process simulation; Silicon devices; Strain; Stress

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; STRAIN; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION; DEEP SUBMICRON DEVICE; SHALLOW TRENCH ISOLATION STRUCTURE;

SEMICONDUCTOR DEVICES;

EID: 17544401132     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)

1. Stress minimisation on deep submicron CMOS processes, measured by a high spatial resolution technique, and its application to 0.15 μm non volatile memories