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Volumn 56, Issue 3, 2009, Pages 499-504

High-quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs

Author keywords

Electrodeposition; Leakage current; Schottky barrier (SB) MOSFET

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); DIODES; DOPING (ADDITIVES); ELECTRODEPOSITION; GERMANIUM; LEAKAGE CURRENTS; MEASUREMENTS; MOSFET DEVICES; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SUBSTRATES;

EID: 62749134415     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011724     Document Type: Article
Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.