High-quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 3, 2009, Pages 499-504

  Husain, Muhammad Khaled ^a   Li, Xiaoli V ^a   de Groot, Cornelis Hendrik ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Electrodeposition; Leakage current; Schottky barrier (SB) MOSFET

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); DIODES; DOPING (ADDITIVES); ELECTRODEPOSITION; GERMANIUM; LEAKAGE CURRENTS; MEASUREMENTS; MOSFET DEVICES; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SUBSTRATES;

ANNEALING TEMPERATURES; BAND GAPS; DENSITY CURVES; DOPED SUBSTRATES; FERMI-LEVEL PINNING; FORWARD BIAS; FORWARD CURRENTS; FOUR-POINT PROBE MEASUREMENTS; HIGH DRIVE CURRENTS; HIGH QUALITIES; HOLE BARRIERS; MOSFETS; NUMERICAL SIMULATIONS; OFF CURRENTS; ORDERS OF MAGNITUDES; P-MOSFETS; SCHOTTKY BARRIER (SB) MOSFET; SCHOTTKY BARRIER MOSFETS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SERIES RESISTANCES; SOURCE-DRAIN LEAKAGES; SPECIFIC RESISTANCES; SUBSTRATE DOPING; SUBTHRESHOLD LEAKAGE CURRENTS;

DRAIN CURRENT;

EID: 62749134415     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011724     Document Type: Article

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