-
1
-
-
0019688978
-
Schottky MOSFET for VLSI
-
C. Koeneke, S. Sze, R. Levin, and E. Kinsbron, "Schottky MOSFET for VLSI," in IEDM Tech. Dig., 1981, vol. 27, pp. 367-370.
-
(1981)
IEDM Tech. Dig
, vol.27
, pp. 367-370
-
-
Koeneke, C.1
Sze, S.2
Levin, R.3
Kinsbron, E.4
-
2
-
-
33744759866
-
2 gate dielectric and TaN gate electrode
-
Jun
-
2 gate dielectric and TaN gate electrode," IEEE Electron Device Lett., vol. 27, no. 6, pp. 476-478, Jun. 2006.
-
(2006)
IEEE Electron Device Lett
, vol.27
, Issue.6
, pp. 476-478
-
-
Li, R.1
Lee, S.2
Yao, H.3
Chi, D.4
Yu, M.5
Kwong, D.-L.6
-
3
-
-
13444302772
-
Highmobility Ge-on-insulator p-channelMOSFETs using Pt germanide Schottky source/drain
-
Feb
-
T. Maeda, K. Ikeda, S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. Takagi, "Highmobility Ge-on-insulator p-channelMOSFETs using Pt germanide Schottky source/drain," IEEE Electron Device Lett., vol. 26, no. 2, pp. 102-104, Feb. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.2
, pp. 102-104
-
-
Maeda, T.1
Ikeda, K.2
Nakaharai, S.3
Tezuka, T.4
Sugiyama, N.5
Moriyama, Y.6
Takagi, S.7
-
4
-
-
33646042498
-
Overview and status of metal S/D Schottky-barrier MOSFET technology
-
May
-
J. Larson and J. Snyder, "Overview and status of metal S/D Schottky-barrier MOSFET technology," IEEE Trans. Electron Devices vol. 53, no. 5, pp. 1048-1058, May 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.5
, pp. 1048-1058
-
-
Larson, J.1
Snyder, J.2
-
5
-
-
33644889343
-
Metal-germanide Schottky source/drain transistor on germanium substrate for future CMOS technology
-
May
-
R. Li, H. Yao, S. Lee, D. Chi, M. Yu, G. Lo, and D. Kwong, "Metal-germanide Schottky source/drain transistor on germanium substrate for future CMOS technology," Thin Solid Films, vol. 504, no. 1/2, pp. 28-31, May 2006.
-
(2006)
Thin Solid Films
, vol.504
, Issue.1-2
, pp. 28-31
-
-
Li, R.1
Yao, H.2
Lee, S.3
Chi, D.4
Yu, M.5
Lo, G.6
Kwong, D.7
-
6
-
-
13444283850
-
Germanium pMOSFETs with Schottky-barrier germanide s/d, high-κ gate dielectric and metal gate
-
Feb
-
S. Zhu, R. Li, S. Lee, M. Li, A. Du, J. Singh, C. Zhu, A. Chin, and D. Kwong, "Germanium pMOSFETs with Schottky-barrier germanide s/d, high-κ gate dielectric and metal gate," IEEE Electron Device Lett., vol. 26, no. 2, pp. 81-83, Feb. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.2
, pp. 81-83
-
-
Zhu, S.1
Li, R.2
Lee, S.3
Li, M.4
Du, A.5
Singh, J.6
Zhu, C.7
Chin, A.8
Kwong, D.9
-
7
-
-
27744605936
-
Electrodeposition of Ni-Si Schottky barriers
-
Oct
-
M. Kiziroglou, A. Zhukov, M. Abdelsalam, X. Li, P. de Groot, P. Bartlett, and C. de Groot, "Electrodeposition of Ni-Si Schottky barriers," IEEE Trans. Magn., vol. 41, no. 10, pp. 2639-2641, Oct. 2005.
-
(2005)
IEEE Trans. Magn
, vol.41
, Issue.10
, pp. 2639-2641
-
-
Kiziroglou, M.1
Zhukov, A.2
Abdelsalam, M.3
Li, X.4
de Groot, P.5
Bartlett, P.6
de Groot, C.7
-
8
-
-
33750510679
-
Analysis of thermionic emission from electrodeposited Ni-Si Schottky barriers
-
M. Kiziroglou, A. Zhukov, X. Li, D. Gonzalez, P. de Groot, P. Bartlett, and C. de Groot, "Analysis of thermionic emission from electrodeposited Ni-Si Schottky barriers," Solid State Commun., vol. 140, no. 11/12, pp. 509-513, 2006.
-
(2006)
Solid State Commun
, vol.140
, Issue.11-12
, pp. 509-513
-
-
Kiziroglou, M.1
Zhukov, A.2
Li, X.3
Gonzalez, D.4
de Groot, P.5
Bartlett, P.6
de Groot, C.7
-
9
-
-
33646075725
-
Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel metal source/ drain MOSFET
-
Jun
-
K. Ikeda, T. Maeda, and S. Takagi, "Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel metal source/ drain MOSFET," Thin Solid Films, vol. 508, no. 1/2, pp. 359-362, Jun. 2006.
-
(2006)
Thin Solid Films
, vol.508
, Issue.1-2
, pp. 359-362
-
-
Ikeda, K.1
Maeda, T.2
Takagi, S.3
-
10
-
-
32044451579
-
Annealing temperature dependence on nickel-germanium solid-state reaction
-
S. Zhu and A. Nakajima, "Annealing temperature dependence on nickel-germanium solid-state reaction," Jpn. J. Appl. Phys., vol. 44, no. 24, pp. L753-L755, 2005.
-
(2005)
Jpn. J. Appl. Phys
, vol.44
, Issue.24
-
-
Zhu, S.1
Nakajima, A.2
-
11
-
-
44749089939
-
Thermionic field emission at electrodeposited Ni-Si Schottky barriers
-
Jul
-
M. Kiziroglou, X. Li, A. Zhukov, P. de Groot, and C. de Groot, "Thermionic field emission at electrodeposited Ni-Si Schottky barriers," Solid State Electron., vol. 52, no. 7, pp. 1032-1038, Jul. 2008.
-
(2008)
Solid State Electron
, vol.52
, Issue.7
, pp. 1032-1038
-
-
Kiziroglou, M.1
Li, X.2
Zhukov, A.3
de Groot, P.4
de Groot, C.5
-
12
-
-
0024685894
-
P-type PtSi Schottky-diode barrier height determined from I-V measurement
-
Jun
-
V. W. L. Chin, J. W. V. Storey, and M. A. Green, "P-type PtSi Schottky-diode barrier height determined from I-V measurement," Solid State Electron., vol. 32, no. 6, pp. 475-478, Jun. 1989.
-
(1989)
Solid State Electron
, vol.32
, Issue.6
, pp. 475-478
-
-
Chin, V.W.L.1
Storey, J.W.V.2
Green, M.A.3
-
13
-
-
62749182928
-
Optoelectronic properties of metal-Ge Schottky barrier quantum detectors
-
E. Chan and H. Card, "Optoelectronic properties of metal-Ge Schottky barrier quantum detectors," in IEDM Tech. Dig., 1978, vol. 24, pp. 653-656.
-
(1978)
IEDM Tech. Dig
, vol.24
, pp. 653-656
-
-
Chan, E.1
Card, H.2
-
14
-
-
0020182758
-
Germanium photodetectors with induced p-n junctions
-
Sep
-
Y. Hsieh and H. Card, "Germanium photodetectors with induced p-n junctions," IEEE Trans. Electron Devices, vol. ED-29, no. 9, pp. 1414-1420, Sep. 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, Issue.9
, pp. 1414-1420
-
-
Hsieh, Y.1
Card, H.2
-
16
-
-
79956034543
-
x
-
Sep
-
x," Appl. Phys. Lett., vol. 81, no. 11, pp. 1978-1980, Sep. 2002.
-
(2002)
Appl. Phys. Lett
, vol.81
, Issue.11
, pp. 1978-1980
-
-
Seger, J.1
Zhang, S.-L.2
Mangelinck, D.3
Radamson, H.H.4
-
17
-
-
15544387594
-
Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs
-
Mar
-
J. Spann, R. Anderson, T. Thornton, G. Harris, S. Thomas, and C. Tracy, "Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs," IEEE Electron Device Lett., vol. 26, no. 3, pp. 151-153, Mar. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.3
, pp. 151-153
-
-
Spann, J.1
Anderson, R.2
Thornton, T.3
Harris, G.4
Thomas, S.5
Tracy, C.6
-
18
-
-
0035307495
-
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
-
Apr
-
H. Lin, K. Yeh, R. Huang, C. Lin, and T. Huang, "Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension," IEEE Electron Device Lett., vol. 22, no. 4, pp. 179-181, Apr. 2001.
-
(2001)
IEEE Electron Device Lett
, vol.22
, Issue.4
, pp. 179-181
-
-
Lin, H.1
Yeh, K.2
Huang, R.3
Lin, C.4
Huang, T.5
-
19
-
-
0036645908
-
Design of 10-nm-scale recessed asymmetric Schottky barrier MOSFETs
-
Jul
-
Y. Zhang, J. Wan, K. Wang, and B.-Y. Nguyen, "Design of 10-nm-scale recessed asymmetric Schottky barrier MOSFETs," IEEE Electron Device Lett., vol. 23, no. 7, pp. 419-421, Jul. 2002.
-
(2002)
IEEE Electron Device Lett
, vol.23
, Issue.7
, pp. 419-421
-
-
Zhang, Y.1
Wan, J.2
Wang, K.3
Nguyen, B.-Y.4
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