Three-dimensional atom mapping of boron in implanted silicon

Ultramicroscopy

Volumn 109, Issue 5, 2009, Pages 649-653

  Cojocaru Miredin O ^a   Cadel, E ^a   Deconihout, B ^a   Mangelinck, D ^c   Blavette, D ^a,b  

^a UNIVERSITÉ DE ROUEN   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Boron; Implanted silicon; Laser atom probe tomography; Microelectronics

Indexed keywords

AB-INITIO; ATOM PROBES; BACKGROUND NOISE; BORON CLUSTERS; BORON-INTERSTITIAL CLUSTERS; DETECTION LIMITS; DOPANT CONCENTRATIONS; IMPLANTED SILICON; LASER-ASSISTED; SAMPLING ERRORS; SECONDARY ION-MASS SPECTROMETRIES; SILICON SUBSTRATES; SIMS PROFILES;

AMORPHOUS FILMS; ATOMS; BORON; BORON COMPOUNDS; DIAGNOSTIC RADIOGRAPHY; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LASERS; MICROELECTRONICS; PROBES; SECONDARY ION MASS SPECTROMETRY; THREE DIMENSIONAL; TOMOGRAPHY;

NONMETALS;

BORON; SILICON;

AB INITIO CALCULATION; ARTICLE; LASER ATOM PROBE TOMOGRAPHY; MASS SPECTROMETRY; TOMOGRAPHY;

EID: 62749122749     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.09.008     Document Type: Article

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