Shape transition in very large germanium islands on Si(111)

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  MacLeod, J M ^a,c   Lipton Duffin, J A ^a,c   Lanke, U ^b   Urquhart, S G ^b   Rosei, F ^a  

^a INRS EMT   (Canada)

^b UNIVERSITY OF SASKATCHEWAN   (Canada)

^c UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

CONCENTRATION OF; CROSS SECTIONS; GE ISLANDS; GERMANIUM ISLANDS; NON-UNIFORM; SHAPE TRANSFORMATIONS; SHAPE TRANSITIONS; SI (1 1 1); STRAIN RELIEFS; X-RAY-PHOTO-EMISSION ELECTRON MICROSCOPIES;

GERMANIUM;

EID: 62549143992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3093674     Document Type: Article

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37. We were unable to carry out full quantitative XPS mapping due to the relatively large focused spot size (∼30 μm) at the SM beamline of the CLS.