External cavity InAsInP quantum dot laser with a tuning range of 166 nm

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Ortner, G ^a,b   Ni Allen, C ^a,c   Dion, C ^a,d   Barrios, P ^a   Poitras, D ^a   Dalacu, D ^a   Pakulski, G ^a   Lapointe, J ^a   Poole, P J ^a   Render, W ^a   Raymond, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b TU DORTMUND UNIVERSITY   (Germany)

^c UNIVERSITY OF OTTAWA   (Canada)

^d ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; ELECTRON ENERGY LEVELS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; TUNING;

CAVITY; CAVITY LASER; LITTROW CONFIGURATION; QUANTUM DOT LASER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645501194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2187431     Document Type: Article

References (18)

1. D. Huang, E. Swanson, C. Lin, J. Schuman, W. Stinson, W. Chang, M. Hee, T. Flotte, K. Gregory, C. Puliafito, and J. Fujimoto, Science 254, 1178 (1991).
2. M. Grundmann, Appl. Phys. Lett. 77, 4265 (2000).
3. F. Klopf, R. Krebs, J. P. Reithmaier, and A. Forchel, IEEE Photon. Technol. Lett. 13, 764 (2001).
4. G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, Electron. Lett. 35, 1163 (1999).
5. O. B. Shchekin and D. G. Deppe, Appl. Phys. Lett. 80, 3277 (2002).
6. C. Ni. Allen, P. J. Poole, P. Marshall, S. Raymond, and S. Fafard, Microelectron. Lett. 34, 415 (2003).
7. C. Ni. Allen, P. J. Polle, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, Physica E (Amsterdam) 26, 372 (2005).
8. H. Tabuchi and H. Ishikawa, Electron. Lett. 26, 742 (1990).
9. S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, IEEE J. Quantum Electron. 39, 426 (2003).
10. U. H. Jacobs, K. Scholle, E. Hermann, G. Huber, M. Rattunde, and J. Wagner, Appl. Phys. Lett. 85, 5825 (2004).
11. P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, IEEE J. Quantum Electron. 36, 479 (2000).
12. A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, J. Phys. D 36, 1928 (2003).
13. P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, Electron. Lett. 36, 1544 (2000).
14. C. Ni. Allen, P. J. Poole, P. Marshall, J. Fraser, S. Raymond, and S. Fafard, Appl. Phys. Lett. 80, 3629 (2002).
15. Y. Qiu, D. Uhl, R. Chacon, and R. Q. Yang, Appl. Phys. Lett. 83, 1704 (2003).
16. J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H. S. Kwack, C. W. Lee, and D. K. Oh, Appl. Phys. Lett. 85, 1033 (2004).
17. J. W. Jang, S. H. Pyun, S. H. Lee, I. C. Lee, W. G. Jeong, R. Stevenson, P. D. Dapkus, N. J. Kim, M. S. Hwang, and D. Lee, Appl. Phys. Lett. 85, 3675 (2004).
18. C. Ni. Allen, G. Ortner, C. Dion, P. J. Poole, P. Barrios, J. Lapointe, G. Pakulski, W. Render, S. Fafard, and S. Raymond, Appl. Phys. Lett. 88, 113109 (2006).